Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process
Bin Hao, Yixuan Yang, Xinling Tang, Zhibin Zhao
IEEE transactions on power electronics March 1, 2023 Peer reviewed DOI: 10.1109/tpel.2022.3219258 via Semantic Scholar
Summary
A new modeling method for simulating the turn-off current of high-voltage, high-power IGBT devices is proposed. The transient analysis model (TAM) is based on the nondual relationship of the switching process. By analyzing the carrier storage effect from the IGBT chip's structural features, the analytical expression for the rate of current change (di/dt) during turn-off is corrected. This nondual approach significantly improves the accuracy of di/dt simulation compared to existing dual modeling methods.
Study at a glance
| Design | theoretical or methodological paper |
|---|---|
| Key finding | The proposed nondual modeling method greatly improves the accuracy of simulating di/dt during the IGBT turn-off process compared to dual modeling methods. |
Abstract
This letter focuses on the accurate simulation of the turn-off current for high-voltage and high-power IGBT devices and proposes a modeling method of transient analysis model (TAM) for IGBT devices based on the nondual relationship of the switching process. Combined with the structural features of the IGBT chip, the carrier storage effect is analyzed and the analytical expression of di/dt during the turn-off process is corrected. Compared with the existing dual modeling methods, the accuracy of the nondual modeling method for di/dt during the turn-off process has been greatly improved.