Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process
IEEE transactions on power electronics March 1, 2023 Bin Hao, Yixuan Yang, Xinling Tang et al. 9 citations
A new modeling method for high-voltage, high-power IGBT devices improves the accuracy of turn-off current simulation. By analyzing the carrier storage effect and correcting the analytical expression of di/dt during turn-off, the proposed transient analysis model (TAM) based on a nondual relationship of the switching process achieves much better accuracy than existing dual modeling methods.